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 MITSUBISHI IGBT MODULES CM300DU-24F HIGH POWER SWITCHING USE

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sasuke188



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Join date : 2011-05-22

PostSubject: MITSUBISHI IGBT MODULES CM300DU-24F HIGH POWER SWITCHING USE   Mon Nov 07, 2011 6:57 pm

MITSUBISHI IGBT MODULES CM300DU-24F HIGH POWER SWITCHING USE

cm300du-24fNote 1. IE, VEC, trr, Qrr, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. (FWDi).
2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
*1 : Tc measured point is indicated in OUTLINE DRAWING.
*2 : Typical value is measured by using Shin-etsu Silicone “G-746”.
*3 : If you use this value, Rth(f-a) should be measured just under the chips.

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